Part Number Hot Search : 
060L1Z 6011C 2N7000 4A102 T6501 T6501 UMX18N CNA1012K
Product Description
Full Text Search
 

To Download M63824KP Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  feb.2003 pin configuration mitsubishi semiconductor m63824gp/kp 7-unit 500ma darlington transistor-array with clamp diode description the m63824gp/kp 7-channel sinkdriver, consists of 14 npn transistors connected to from seven high current gain driver pairs. features  high breakdown voltage (bv ceo 50v)  high-current driving (i c(max) = 500ma)  with clamping diodes  3v micro computer series compatible input  wide operating temperature range (ta = ?0 to +85 c) application output for 3 voltage microcomputer series and interface with high voltage system. relay and small printer driver, led, or incandescent display digit driver. function the m63824gp/kp is transistor-array of high active level seven units type which can do direct drive of 3 voltage micro- computer series. a resistor of 1.05k ? is connected between the input pin. a clamp diode for inductive load transient sup- pression is connected for the output pin (collector) and com pin (pin9). all emitters of the output transistor are connected to gnd (pin8). the outputs are capable of driving 500ma and are rated for operation with output voltage up to 50v. collector-emitter voltage collector current input voltage clamping diode forward current clamping diode reverse voltage power dissipation operating temperature storage temperature v ma v ma v w c c ?.5 ~ +50 500 ?.5 ~ +10 500 50 0.80(gp)/0.6(kp) ?0 ~ +85 ?5 ~ +125 ratings symbol parameter conditions unit absolute maximum ratings (unless otherwise noted, ta = ?0 ~ +85 c) output, h current per circuit output, l ta = 25 c, when mounted on board v ceo i c v i i f v r p d t opr t stg 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 in1 in2 in3 in4 in5 in6 in7 gnd com common input output o1 o2 o3 o4 o5 o6 o7 16p2s-a(gp) 16p2z-a(kp) package type circuit diagram com gnd 1.05k 3k 7.2k output input unit : ? the seven circuits share the com and gnd the diode, indicated with the dotted line, is parasitic, and cannot be used.
feb.2003 mitsubishi semiconductor m63824gp/kp 7-unit 500ma darlington transistor-array with clamp diode i c 400ma duty cycle gp : no more than 4% kp : no more than 3% recommended operating conditions (unless otherwise noted, ta = 40 ~ +85 c) v parameter 0 limits min typ max symbol unit v o output voltage h input voltage l input voltage duty cycle gp : no more than 15% kp : no more than 12% collector current (current per 1 circuit when 7 circuits are coming on simultaneously) i c 0 0 2.4 0 50 400 200 10 0.4 ma v v v ih v il timing diagram note 1 test circuit ns ns 15 350 symbol unit parameter test conditions limits min typ max turn-on time turn-off time t on t off c l = 15pf (note 1) switching characteristics (unless otherwise noted, ta = 25 c) 1.2 1.0 0.9 1.5 1.4 2500 50 1000 v (br) ceo i i v f i r h fe v v ma v a 1.6 1.3 1.1 2.4 2.0 100 symbol unit parameter test conditions limits min typ max collector-emitter breakdown voltage input current clamping diode forward volltage clamping diode reverse current dc amplification factor i ceo = 100 a i i = 500 a, i c = 350ma i i = 350 a, i c = 200ma i i = 250 a, i c = 100ma v i = 3v i f = 350ma v r = 50v v ce = 2v, i c = 350ma v ce(sat) collector-emitter saturation voltage electrical characteristics (unless otherwise noted, ta = 25 c) input 50% 50% 50% 50% output ton toff pg input output v o r l open c l 50 ? (1)pulse generator (pg) characteristics : prr=1khz, tw = 10 s, tr = 6ns, tf = 6ns, zo = 50 ? v i = 0 ~ 3v (2)input-output conditions : r l = 25 ? , vo = 10v (3)electrostatic capacity c l includes floating capacitance at connections and input capacitance at probes measured device conditions
feb.2003 mitsubishi semiconductor m63824gp/kp 7-unit 500ma darlington transistor-array with clamp diode clamping diode characteristics 400 300 200 100 0 0 0.5 1.0 1.5 2.0 500 forward bias current if (ma) forward bias voltage v f (v) ta=25 c ta=85 c ta=?0 c 1 2 3 4 5 6 7 duty cycle-collector characteristics (m63824gp) 200 100 0 400 300 500 0 20 40 60 80 100 duty cycle (%) collector current ic (ma) 1 2 3 4 5 6 7 duty cycle-collector characteristics (m63824gp) 200 100 0 400 300 500 0 20 40 60 80 100 duty cycle (%) collector current ic (ma) 1 2 3 4 5 6 7 duty cycle-collector characteristics (M63824KP) 0 0 20 40 60 80 100 duty cycle (%) 200 100 400 300 500 collector current ic (ma) 1 2 3 4 5 6 7 duty cycle-collector characteristics (M63824KP) 0 0 20 40 60 80 100 duty cycle (%) 200 100 400 300 500 collector current ic (ma) thermal derating factor characteristics 1.0 0.8 0.2 0 0 25 50 75 100 M63824KP m63824gp 85 0.416 0.312 0.4 0.6 ambient temperature ta ( c) power dissipation pd (w) ?he collector current values represent the current per circuit. ?epeated frequencyy 10hz ?he value the circle represents the value of the simultaneously-operated circuit. ?a = 25 c ?he collector current values represent the current per circuit. ?epeated frequencyy 10hz ?he value the circle represents the value of the simultaneously-operated circuit. ?a = 25 c ?he collector current values represent the current per circuit. ?epeated frequency 10hz ?he value the circle represents the value of the simultaneously-operated circuit. ?a = 85 c ?he collector current values represent the current per circuit. ?epeated frequency 10hz ?he value the circle represents the value of the simultaneously -operated circuit. ?a = 85 c typical characteristics
feb.2003 mitsubishi semiconductor m63824gp/kp 7-unit 500ma darlington transistor-array with clamp diode output saturation voltage-collector current characteristics output saturation voltage-collector current characteristics grounded emitter transfer characteristics 400 300 200 100 0 0 0.4 0.8 1.2 1.6 500 collector current ic (ma) output saturation voltage v ce (sat) (v) ta=25 c ta=85 c ta=?0 c ta=?0 c ta=?0 c input characteristics 0 1 2 3 4 01 2 34 5 input voltage v i (v) input current i i (ma) 0 0.2 0.4 0.6 0.8 1.0 0 output saturation voltage v ce (sat) (v) input voltage v i (v) 40 20 80 60 100 collector current ic (ma) 0 0 0.4 0.8 1.2 1.6 2.0 200 100 400 300 500 collector current ic (ma) dc amplification factor collector current characteristics collector current i c (ma) dc amplification factor h fe 10 2 10 3 3 2 5 7 10 4 3 2 5 7 10 2 3 257 10 3 3 257 10 1 v ce =2v v ce =2v i i =500 a i i =500 a ta=?0 c ta=25 c ta=85 c ta=25 c ta=85 c ta=25 c ta=85 c ta=?0 c ta=25 c ta=85 c


▲Up To Search▲   

 
Price & Availability of M63824KP

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X